| Magnification | 15 to 30,000× (digital zoom: 2×, 4×) |
| Observation condition | 5kV/15kV/Analysis |
| Observation mode | Standard mode Charge-up reduction mode |
| Image mode | COMPO/Shadow 1/Shadow 2/TOPO |
| Sample stage traverse | X: ±17.5mm, Y: ±17.5mm |
| Maximum sample size | 70mm in diameter |
| Maximum sample height | 50mm |
| Electron gun | Pre-centered cartridge filament |
| Signal detection system | High-sensitive semiconductor BSE detector |
| Auto image adjustment function |
Auto start, Auto focus, Auto brightness/contrast |
| Operation help functions | Raster rotation, Magnification preset (two steps) Image shift (±50μm@D*=4.5) |
| Frame memory | 640 × 480 pixels, 1,280 × 960 pixels |
| Image data memory | HDD of PC and other removal media |
| Image format | BMP, TIFF, JPEG |
| Data display | Micron marker, micron value, date and time, image number and comments, Image mode, Observation condition, D* (Distance), Observation mode |
| Evacuation system (vacuum pump) | Turbomolecular pump: 30L/s × 1 unit, Diaphragm pump: 1m3/h × 1 unit |
| Safety device | Over-current protection function, built-in ELCB |
| *D (Distance) is defined as the distance between lower surface of a high-sensitive semiconductor BSE detector and sample surface. | |